[20a-C9-1~12] 13.1 Basic properties and their evaluation

[20a-C9-1] Stress evaluation of 2MeV electron irradiated strained-Si/relaxed-Si0.7Ge0.3/Si-substrate

^○(B)Eishiro Murakami¹, Toshiyuki Nakashima^2,3, Masashi Yoneoka¹, Tsunoda Isao¹, Takakura Kenichiro¹, Naka Nobuyuki⁴, Suemasu Takashi⁵ (Kumamoto National College of Technology¹, Miyazaki Univ.², Chuo Denshi Kogyo Co. Ltd.³, HORIBA Ltd.⁴, Tsukuba Univ.⁵)

Keywords:ひずみSi