The 74th JSAP Autumn Meeting,2013

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)

9:15 AM - 9:30 AM

[20a-D6-2] Epitaxial Growth of β-FeSi2 film on Si(110) with Ag layer

○Kensuke Akiyama1, Ryo Takahashi1, Yoshihisa Mastumoto1, Shunichi Motomura3, Gohei Hayashi3, Hiroshi Funakubo2, Masaru Itakura3 (Kanagawa Ind. Tec. Cen.1, Tokyo Inst.2, Kyusyu Univ.3)

Keywords:β-FeSi2,エピタキシャル成長