10:15 AM - 10:30 AM
[20a-D6-6] A study on carrier density of \beta-FeSi2 formed by Fe/Si multi-layered Sputtering
Keywords:FeSi2,環境半導体,キャリア密度
Oral presentation
14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials
Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)
10:15 AM - 10:30 AM
Keywords:FeSi2,環境半導体,キャリア密度