The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)

10:15 AM - 10:30 AM

[20a-D6-6] A study on carrier density of \beta-FeSi2 formed by Fe/Si multi-layered Sputtering

Takafumi Katou1, Taichi Inamura1, Akito Sasaki3, Katsuaki Aoki3, Kuniyuki Kakushima2, Yoshinori Kataoka2, Akira Nishiyama2, Nobuyuki Sugii2, Hitoshi Wakabayashi2, Kazuo Tsutsui2, Kenji Natori1, Hiroshi Iwai1 (Tokyo Tech.FRC1, Tokyo Tech IGSSE2, Toshiba Material Co.,LTD3)

Keywords:FeSi2,環境半導体,キャリア密度