The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)

10:45 AM - 11:00 AM

[20a-D6-7] Molecular beam epitaxy of BaSi2 epitaxial films exceeding 1.5 μm on Si(111)

○(M1)Ryota Takabe1, kotaro Nakamura1, Masakazu Baba1, Weijie Du1, Muhammad Ajmal Khan1, Kaoru Toko1, Masato Sasase2, Kosuke Hara3, Noritaka Usami3,4, Takashi Suemasu1,4 (Tsukuba Univ.1, The Wakasa Wan Energy Research Center2, Nagoya Univ.3, JST-CREST4)

Keywords:BaSi2,半導体,太陽電池