[20a-D7-1~11] 14.3 Electron devices and Process technology

△ [20a-D7-10] GaN Schottky Barrier Diode with TiN Electrode for Microwave Power Rectification

^○(M1C)Yuki Itai¹, Akinori Kishi¹, Liuan Li¹, Takayuki Shiraishi¹, Kazuhito Fukui¹, Qiang Liu¹, Jin-Ping Ao¹, Yasuo Ohno² (STS Univ. Tokushima¹, e-Device Inc²)

Keywords:GaN Schottky Barrier Diode,TiN,マイクロ波整流