The 74th JSAP Autumn Meeting,2013

Presentation information

Print

Oral presentation

13. Semiconductors A (Silicon) » 13.5 Si process technology

[20p-B4-1~8] 13.5 Si process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM B4 (TC2 1F-106)

2:45 PM - 3:00 PM

[20p-B4-8] Improvement of As Activation in Ge with As+ Ion Implantation at Low Temperature

○Takahiro Ono1, Akio Ohta1, Hiroaki Hanafusa1, Hideki Murakami1, Seiichiro Higashi1, Seiichi Miyazaki2 (Grad. School of AdSM, Hiroshima Univ.1, Grad. School of Eng., Nagoya Univ.2)

Keywords:Ge,イオン注入