[20p-C8-1~5] 13.6 Silicon devices / Integration technology

▲ [20p-C8-5] Observation of Individual Dopants in the Electrical Characteristics of Nanoscale pn Junctions

^○(D)Sri Purwiyanti^1,2, Daniel Moraru¹, Takeshi Mizuno¹, Djoko Hartanto², Michiharu Tabe¹ (Research Inst. of Elec., Shizuoka Univ.¹, Dep. of Elec., UI²)

Keywords:individual dopant,nano pn junction,RTS