Theoretical Investigation for Atomic Position of III Group Elements  in Growth Process of InN/GaN Hetero Structure

Presentation information

Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

Fri. Sep 20, 2013 1:00 PM - 2:30 PM D3 (MK 2F-201)

1:30 PM - 1:45 PM

^○Ayako Ito¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie Univ.¹)

Keywords:InN/GaN,半導体