Guwangxu Ju¹, Shingo Fuchi^2,5, Masao Tabuchi^2,3, Yoshikazu Takeda⁴, Yoshio Honda¹, Masafumi Yamaguchi^1,2, ^○Hiroshi Amano^1,2 (Nagoya Univ.¹, NUARC², NUSR³, ASTF-AichiSR⁴, Aoyama Gakuin Univ.⁵)

Oral presentation

[20p-D3-1~6] 15.7 Fundamentals of epitaxy

Fri. Sep 20, 2013 1:00 PM - 2:30 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-D3-1] Theoretical study for crystal structures deformation in A8-NBN compounds

^○Yoshitaka Takemoto¹, Tomonori Ito¹, Toru Akiyama¹, Kohji Nakamura¹ (Mie Univ.¹)

1:15 PM - 1:30 PM

[20p-D3-2] Ab initio-based approach to surface-structure change on wetting layer of InAs/GaAs(001)

^○Kentaro Hirai¹, Toru Akiyama¹, Koji Nakamura¹, Tomonori Ito¹ (Mie Univ.¹)

1:30 PM - 1:45 PM

[20p-D3-3] Theoretical Investigation for Atomic Position of III Group Elements in Growth Process of InN/GaN Hetero Structure

^○Ayako Ito¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie Univ.¹)

1:45 PM - 2:00 PM

[20p-D3-4] Theoretical investigation for miscibility of GaN_xAs_1-x-yBi_y /GaAs(001) thin film

^○Takahiro Makihara¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie Univ.¹)

2:00 PM - 2:15 PM

[20p-D3-5] Theoretical investigation for GaNxAs1-x nanowires with lattice constraint around nanowire facets

^○Masataka Kato¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie Univ.¹)

2:15 PM - 2:30 PM

[20p-D3-6] Control of supersaturation by mask pattern in GaAs microchannel epitaxy

^○Masafumi Tomita¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Yosuke Mizuno¹, Junpei Yamada¹, Takeshige Hishida¹, Daisuke Kanbayashi¹, Shigeya Naritsuka¹ (Meijo Univ.¹)

Sessions

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[20a-D3-1~5] 15.7 Fundamentals of epitaxy

[20a-D3-1] Theoretical investigations for N-pair formation on the GaAs(001)-(2×4) surfaces

[20a-D3-2] Electronic states and Structural Stability of the Mn Adsorbed GaAs(001) Surfaces

[20a-D3-3] [INVITED]Epitaxial growth mechanisms-what we know and what we should know-

[20a-D3-4] [INVITED]Selective Area Growth Mechanisms of Compound Semiconductor Nanowires

[20a-D3-5] [INVITED]Atomic Level In-Situ Monitoring During Epitaxial Growth of Group III Nitrides