The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[20a-D3-1~5] 15.7 Fundamentals of epitaxy

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D3 (MK 2F-201)

10:30 AM - 11:15 AM

[20a-D3-4] [INVITED]Selective Area Growth Mechanisms of Compound Semiconductor Nanowires

○takashi fukui1 (GS-IST, RCIQE､Hokkaido Univ1)

Keywords:半導体,ナノワイヤ,結晶成長