The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D6 (MK 3F-301)

1:15 PM - 1:30 PM

△ [20p-D6-2] Fabrication of amorphous Mg2Si-based semiconductors by small addition of reactive sputtering gas

○(M1)Shota Hara1, Hiroyuki Fujiwara1 (Gifu Univ.1)

Keywords:Mg2Si,スパッタ,太陽電池