The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D6 (MK 3F-301)

2:30 PM - 2:45 PM

△ [20p-D6-7] Microscopic mechanism of band-gap variations in SiC polytypes based on ab initio calculations: Finding of peculiar electron states floating in internal space

○Yu-ichiro Matsushita1,2, Atsushi Oshiyama1 (The University of Tokyo1, Max-Planck Institute of Microstructure Physics2)

Keywords:SiC,多形,バンドギャップ