First principles study for electrical transport of HfO<sub>2</sub>-based resistive memories

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D6 (MK 3F-301)

2:45 PM - 3:00 PM

^○Takehide Miyazaki¹, Hisao Nakamura¹, Kengo Nishio¹, Hisashi Shima², Hiroyuki Akinaga², Yoshihiro Asai¹ (AIST-NRI¹, AIST-NERI²)

Keywords:第一原理,抵抗変化