The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20p-D7-1~8] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D7 (MK 3F-302)

1:00 PM - 1:15 PM

[20p-D7-1] Fundamental Study on Mg-Ion Implanted GaN Grown on a Free-Standing GaN Substrate

○Takuya Oikawa1, Naoki Kaneda2, Shigeki Kato1, Tomoyoshi Mishima2, Tohru Nakamura1 (Hosei University1, Hitachi Cable Ltd.2)

Keywords:Mg注入,GaN