[20p-D7-1~8] 14.3 Electron devices and Process technology

[20p-D7-2] Electrical Characterization of TiSi₂ Contacts on AlGaN/GaN Structure

^○Xihao Tan¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Wataru Saito³, Hiroshi Iwai¹, Kenji Natori¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Toshiba corp.³)

Keywords:AlGaN/GaN コンタクト 低温