[20p-D7-1~8] 14.3 Electron devices and Process technology

[20p-D7-5] Influence of metal material on capacitance for Schottky-gated AlGaN/GaN

^○Syu Munekiyo¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

Keywords:AlGaN/GaN,ショットキーゲート材料