The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20p-D7-1~8] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D7 (MK 3F-302)

2:45 PM - 3:00 PM

[20p-D7-8] Self-aligned Ion-implanted Normally-off MISFETs on Free-Standing GaN Substrates

○(M2)Hiroki Ogawa1, Hayao Kasai1, Naoki Kaneda3, Tomonobu Tsuchiya2, Mishima Tomoyoshi3, Tohru Nakamura1 (Hosei Univ.1, Hitachi Ltd.2, Hitachi Cable Ltd.3)

Keywords:イオン注入