Session information

Regular sessions(Oral presentation)

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[27a-A6-1~11] 6.2 Carbon-based thin films

Wed. Mar 27, 2013 9:00 AM - 12:00 PM A6 (K1 3F-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27a-A6-1] Evaluation of Boron Delta-Doped Diamond (111) Structures

^○（B）Takuma Minamiyama¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Kanazawa Univ.¹, AIST², JST,CREST³)

[27a-A6-2] Carrier Transport Properties of Non-degenerate Heavily-Boron-Doped Single-crystalline CVD Diamond Thin Layers Stacked Using Microwave Plasma Processes

^○Tomohiro Kuki¹, Osamu Maida¹, Toshimichi Ito¹ (Graduate School of Eng., Osaka Univ.¹)

[27a-A6-3] △Effect of Substrate Surface Polishing on the Chemical Vapor Deposited Diamond

^○Yukako Kato¹, Hitoshi Umezawa¹, Shin-ichi Shikata¹, Mutsumi Touge² (AIST, DRL¹, Kumamoto Univ.²)

[27a-A6-4] ▲Electronic band structures of Al₂O₃ and HfO₂ deposited by atomic layer deposition technique on hydrogenated diamond

^○Jiangwei Liu¹, Meiyong Liao¹, Masataka Imura¹, Yasuo Koide^1,2,3 (Optical and Electronic Materials Unit, NIMS¹, Nanofabrication Platform, NIMS², Center of Materials Research for Low Carbon Emission,NIMS³)

[27a-A6-5] △Al-first AlN Growth on Diamond by Molecular Beam Epitaxy

^○Wako Ono¹, Yuki Yokoyama¹, Ryusuke Kanomata¹, Daiki Utsunomiya¹, Tomohiro Hakamata¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

[27a-A6-6] △AlN epitaxial growth on partially oxygen-terminated diamond surface using molecular beam epitaxy (MBE)

^○Tomohiro Hakamata¹, Yuki Yokoyama¹, Wako Ono¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

[27a-A6-6.1] Break(15min)

[27a-A6-7] Hydrogen termination on the surface of the diamond (111) by hydrogen annealing

^○（B）Tatsuma Chonan¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Satosi Yamasaki^2,3, Takao Inokuma¹ (Kanazawa Univ.¹, AIST², CREST/JST³)

[27a-A6-8] Reverse I-V characteristics of diamond PiN diodes

^○Mariko Suzuki^1,2,3, Tadashi Sakai¹, Toshiharu Makino^2,3, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^2,3 (Corporate R & D Center, Toshiba Corp.¹, ETL, AIST², CREST(JST)³)

[27a-A6-9] Carrier transport of diamond p⁺-i-n⁺ junction using hopping p+ and n+ layers

^○Toshiharu Makino^1,2, Sung-Gi Ri¹, Tsubasa Matsumoto^1,2,3, Daisuke Kuwabara^1,2,3, Hiromitsu Kato^1,2, Daisuke Takeuchi^1,2, Masahiko Ogura^1,2, Hideyo Okushi^1,2, Satoshi Yamasaki^1,2,3 (ETRI, AIST¹, CREST/JST², Univ. of Tsukuba³)

[27a-A6-10] Thermal Behavior of Current between Narrow Electrodes on Ib Diamond and Emission

^○Yuki Kudo^1,2,3, Daisuke Takeuchi^2,3,4, Toshiharu Makino^2,3,4, Masahiko Ogura^2,3,4, Hideyo Okushi^2,3,4, Satoshi Yamasaki^1,2,3,4 (Univ. of Tsukuba¹, AIST², CREST(JST)³, ALCA(JST)⁴)

[27a-A6-11] Vacuum Power Switch with Negative Electron Affinity of Diamond (3)

^○Daisuke Takeuchi^1,3,4, Satoshi Koizumi^2,3,4, Toshiharu Makino^1,3,4, Hiromitsu Kato^1,3,4, Masahiko Ogura^1,3,4, Hideyo Okushi^1,3,4, Hiromichi Ohashi^1,3,4, Satoshi Yamasaki^1,3,4 (AIST, ETRI¹, NIMS², ALCA, JST³, CREST, JST⁴)

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