[27p-A6-1~16] 6.2 Carbon-based thin films

Wed. Mar 27, 2013 1:30 PM - 6:15 PM A6 (K1 3F-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-A6-0] Lunch(90min)

[27p-A6-1] Superconducting Qubit - Diamond NV-center Hybrid Quantum System

^○Kouichi Semba¹ (National Institute of Informatics (NII)¹)

[27p-A6-2] Electrical manipulation of charge state of single NV center in diamond

^○Yuki Doi¹, Toshiharu Makino², Hiromitsu Kato², Masahiko Ogura², Daisuke Takeuchi², Hideyo Okushi², Satoshi Yamasaki², Jörg Wrachtrup³, Shinji Miwa¹, Yoshishige Suzuki¹, Norikazu Mizuochi¹ (Osaka Univ.¹, AIST², Stuttgart Univ.³)

[27p-A6-3] △Controlled doping of nitrogen-vacancy centers in a diamond thin film fabricated using nitrogen-doped chemical vapor deposition on micro-patterned substrate

^○Shuhei Tomizawa¹, Kohei Ohashi¹, Kohei Itoh¹, Junko Hayase¹, Hideyuki Watanabe², Hitoshi Umezawa², Shinichi Shikata² (Keio Univ.¹, AIST²)

[27p-A6-4] Fabrication of the ordered array of optical centers in diamond by low-energy ion implantation Ⅱ

^○Syuto Tamura¹, Akira Komatsubara¹, Tokuyuki Teraji², Shinobu Onoda³, Takeshi Ohshima³, Christoph Müller⁴, Boris Naydenov⁴, Liam McGuinness⁴, Takahiro Shinada⁵, Junichi Isoya⁶, Fedor Jelezko⁴, Takashi Tanii¹ (Waseda Univ.¹, NIMS², JAEA³, Ulm Univ.⁴, AIST⁵, Tsukuba Univ.⁶)

[27p-A6-5] Effective use of methane for isotopic enriched diamond growth

^○Tokuyuki Teraji¹, Takashi Taniguchi¹, Satoshi Koizumi¹, Yasuo Koide¹, Junichi Isoya² (NIMS¹, Univ. Tsukuba²)

[27p-A6-6] △The fabrication of the P-type transparent conducting films using by heavily boron-doped nano crystalline diamond

^○Mitsuyasu Koga¹, Shinichiro Kurihara¹, Ryuusuke Kanomata¹, Xianfen Wang¹, Khalil Ishak Khairul¹, Yoshihiko Takano², Takahide Yamaguchi², Masataka Hasegawa³, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹, NIMS², AIST³)

[27p-A6-6.1] Break(15min)

[27p-A6-7] Electron Spectroscopic Study of Schottky Barrier Height of DC Plasma Grown Homo-epitaxial p-type Diamond (001)

^○Shozo Kono¹, Kimiyoshi Ichikawa¹, Taro Yoshikawa¹, Hideyuki Kodama¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹)

[27p-A6-8] Operation mechanism of heat-resistive NO₂-adsorbed H-terminated diamond FETs stabilized by Al₂O₃ passivation

^○Kazuyuki Hirama¹, Hisashi Sato¹, Yuichi Harada¹, Hideki Yamamoto¹, Makoto Kasu^1,2 (NTT Basic Research Lab.¹, Saga Univ.²)

[27p-A6-9] △Passivation of hydrogen-terminated diamond surface using highly insulating and environment-resistant ALD-Al2O3 film

^○Tatsuya Saito¹, Akira Daicho¹, Atsushi Hiraiwa¹, Hiroshi Karawada¹ (Waseda Univ.¹)

[27p-A6-10] △400℃ operation of hydrogen-terminated diamond MOSFETs with Al₂O₃ passivation

^○Hidetoshi Tsuboi¹, Tomoya Naruo¹, Akira Daicho¹, Tatsuya Saito¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

[27p-A6-11] Breakdown Voltage Evaluation of Diamond Lateral Junction Devices

^○Kazuki Sato¹, Takayuki Iwasaki¹, Yuto Hoshino¹, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Daisuke Takeuchi², Hideyo Ohkushi², Satoshi Yamasaki², Mutsuko Hatano¹ (Tokyotech¹, aist²)

[27p-A6-11.1] Break(15min)

[27p-A6-12] Fabrication of diamond semiconductor/half-metal Co₂MnSi Schottky junctions

Takashi Soumiya¹, ^○Kenji Ueda¹, Masato Nishiwaki¹, Keita Kawamoto¹, Tetsuya Miyawaki¹, Hidefumi Asano¹ (Nagoya Univ.¹)

[27p-A6-13] High temperature stability of diamond Schottky junctions

^○Keita Kawamoto¹, Kenji Ueda¹, Takashi Somiya¹, Masato Nishiwaki¹, Tetsuya Miyawaki¹, Hidefumi Asano¹ (Nagoya Univ.¹)

[27p-A6-14] △The comparison between (111) and (100) of contact resistance for metal /p-type diamond

^○Kazuya Shirota^1,3,4, Tsubasa Matsumoto^1,2,4, Masahiko Ogura^1,4, Hiromitsu Kato^1,4, Toshiharu Makino^1,4, Daisuke Takeuchi^1,4, Hideyo Okushi^1,4, Satoshi Yamasaki^1,2,4 (AIST¹, Univ. of Tsukuba², Univ. of Meiji³, CREST⁴)

[27p-A6-15] △The reduction of contact resistance for metal/n-type diamond interface using carbon intermediate layer

^○（D）Tsubasa Matsumoto^1,2,3, Kazuya Shirota^2,3, Hiromitsu Kato^2,3, Norio Tokuda^2,3,4, Daisuke Takeuchi^2,3, Toshiharu Makino^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^1,2,3 (Univ. of Tsukuba¹, AIST², CREST³, Kanazawa Univ.⁴)

[27p-A6-16] △Temperature Dependence of Diamond Lateral Junction Field Effect Transistor

^○Yuto Hoshino¹, Takayuki Iwasaki¹, Kohei Tuzuki¹, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Daisuke Takeuchi², Hideyo Ohkushi², Satoshi Yamasaki², Mutsuko Hatano¹ (Tokyo Tech.¹, AIST²)

Session information

[27p-A6-1~16] 6.2 Carbon-based thin films