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Symposium(Oral presentation)

Symposium » ・Semiconductor modeling and simulation: today and tomorrow

[27p-G10-1~6] Semiconductor modeling and simulation: today and tomorrow

Wed. Mar 27, 2013 1:30 PM - 4:45 PM G10 (B5 2F-2204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-G10-0] Lunch(90min)

[27p-G10-1] Semiconductor materials design with first-principles density functional theory calculations

^○Junichi Iwata¹ (The University of Tokyo¹)

[27p-G10-2] Atomistic modeling of dopant diffusion in SiGe-channel using Kinetic MC method

^○Taiji Noda¹, Wilfried Vandervorst^{2, 3} (Panasonic Corp.¹, IMEC², K. U. Leuven³)

[27p-G10-2.1] Break(15min)

[27p-G10-3] Future Prospective on Scaled MOSFETs

^○Shinichi Takagi¹, Mitsuru Takenaka¹ (The University of Tokyo¹)

[27p-G10-4] Simulation for nano-scale devices: Why Monte Carlo method?

^○Nobuyuki Sano¹ (Univ. Tsukuba¹)

[27p-G10-5] Non-equilibrium Green's Function Simulation for Ultra-small MOSFETs

^○Nobuya Mori^1,2 (Osaka Univ.¹, JST CREST²)

[27p-G10-6] Quantum Hydrodynamic Models for Carrier Transport Simulation in Scaled MOSFETs

^○Shohiro Sho¹, Shinji Odanaka² (Osaka Univ.¹, Osaka Univ. Cybermedia Center²)