Session information

Symposium(Oral presentation)

Symposium » ・Synthesis & Characterization of 2 dimensional layered materials

[28p-G12-1~12] Synthesis & Characterization of 2 dimensional layered materials

Thu. Mar 28, 2013 1:00 PM - 5:45 PM G12 (B5 2F-2206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G12-1] Ultra-thin films of graphene, h-BN and other honeycomb compounds

^○Chuhei Oshima¹ (Waseda. Uni.¹)

[28p-G12-2] Characterization of interface between domains of epitaxial CVD graphene

^○（DC）Yui Ogawa¹, Kenji Kawahara², Masahiro Miyashita¹, Masaharu Tsuji^1,2, Katsuyoshi Komatsu³, Kazuhito Tsukagoshi³, Hiroki Ago^1,2 (Kyushu Univ.¹, Kyushu Univ.², NIMS WPI-MANA³)

[28p-G12-3] Shape-controlled synthesis of graphene and boron nitride heterostructures

^○Yasumitsu Miyata¹, Eriko Maeda¹, Yu Kobayashi¹, Ryo Kitaura¹, Hisanori Shinohara¹ (Nagoya Univ.¹)

[28p-G12-4] Graphene nanoribbons grown on SiC nano-surfaces by molecular beam epitaxy- Control of the edge structures and ribbon widths -

^○Takashi Kajiwara¹, Yuzuru Nakamori¹, Anton Visikovskiy¹, Kan Nakatsuji³, Fumio Komori², Satoru Tanaka¹ (Kyushu Univ.¹, Univ. of Tokyo², Tokyo Inst. Tech³)

[28p-G12-5] Graphene on single-crystalline insulating substrates

^○Toshio Ogino¹, Yusuke Iida¹, Takayuki Kase¹, Kosuke Saito¹, Kenji Yamazaki¹ (Yokohama Natl. Univ.¹)

[28p-G12-6] △Direct growth and integration of graphene nanoribbon

^○Toshiaki Kato¹, Rikizo Hatakeyama¹, Toshiro Kaneko¹ (Tohoku Univ.¹)

[28p-G12-7] Characterization of graphene by hybrid micro-imaging of Raman spectroscopy and photo reflectance spectroscopy

^○Katsuya Nozawa¹, Nozomu Matsukawa¹, Shigeo Yoshii¹ (Panasonic Corporation¹)

[28p-G12-7.1] Break(15min)

[28p-G12-8] Synthesis and Structural/Electronic Properties Characterizations of Silicene

^○Yukiko Yamada-Takamura¹ (School of MS, JAIST¹)

[28p-G12-9] Synthesis and metallization of exfoliated nanosheet crystallites

^○Katsutoshi Fukuda¹ (産官学連携本部¹)

[28p-G12-10] Preparation and device application of two-dimensional layered chalcogenide thin fims

^○Keiji Ueno¹ (Saitama Univ.¹)

[28p-G12-11] Investigation of Device Fabrication Processes for Ultra-thin MoS₂ Transistors

^○Rui Kanemura¹, Takahiro Mori², Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Tatsuro Maeda², Noriyuki Uchida², Noriyuki Miyata², tetsuji Yasuda², Masatoshi Tanaka¹, Atsushi Ando² (Yokohama National Univ¹, AIST², NIMS³)

[28p-G12-12] Fabrication and Electrical Characterization of Thin Films of Transition Metal Dichalcogenides using 'Nanomanipulator' in SEM

^○Atsushi Ando¹, Tetsuo Shimizu¹, Hiroshi Suga^2,1, Yukinori Morita¹, Yusuke Tabata³, Keiji Ueno³ (AIST¹, CIT², Saitama Univ.³)

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