[29a-G14-1~10] 12.1 Fabrication methods

Fri. Mar 29, 2013 9:00 AM - 11:45 AM G14 (B5 3F-2302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29a-G14-1] Organic Light-Emitting Diode Fabricated by Ultrasonic Atomization Method

^○Arata Sato¹, Takeshi Fukuda¹, Teruo Yoshitomi², Norihiko Kamata¹ (Saitama Univ.¹, Calsonic Kansei²)

[29a-G14-2] Evaluation of Electrical Charge of Organic Solvent Droplets Sprayed by Electrospray Deposition Method

^○Asumi Suzuki¹, Takeshi Fukuda¹, Norihiko Kamata¹, Zentaro Honda¹ (Saitama Univ.¹)

[29a-G14-3] Effect of substrate temperature on the surface morphology of α-NPD thin film deposited by nanomist deposition (NMD) technique

^○Takayuki Irie¹, Daiki Nishi¹, Minami Kazama¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotech Research Center²)

[29a-G14-4] Characteristics of the organic thin film solar cell with double active layers fabricated by a spray coating technique

^○（M1）Yuichi Deguchi¹, Shin Paik-Kyun², Sizuyasu Ochiai¹ (Aichi Inst. of Tech¹, Inha Univ²)

[29a-G14-5] Characteristics of the organic solar cells fabricated by the active layer prepared with electrostatic coating and spray coating methods

^○（M1C）ＤａｉｔｉＹａｍａｍｏｔｏ¹, Shizuyasu Oｃｈｉａｉ¹ (Aichi Institute of Technology¹)

[29a-G14-5.1] Break(15min)

[29a-G14-6] Fabrication of multilayered organic solar cells deposited on rubbed P3HT films

^○Kei Sugimoto¹, Eiji Itoh¹ (Shinshu Univ.¹)

[29a-G14-7] Fabrication of Bulk Hetero Junction Organic Solar Cells Sandwiched by Low-Temperature Processed Solution Based Crystalline Oxide Carrier Selective Layers

^○Yoshinori Goto¹ (Shinshu Univ.¹)

[29a-G14-8] Formation of Phosphorescent Polymer Film Patterns using Spin-coated Photosensitive Films

Hirosato Kato¹, Kuniaki Tanaka¹, ^○Hiroaki Usui¹ (Tokyo Univ.Agricul.&Technol¹)

[29a-G14-9] Alignment Control of Semiconducting Columnar Liquid Crystals under Oscillating Shear and Their Anisotropy of Carrier Transport Properties

^○Jaeki Kim¹, Takeshi Hayashi¹, Takashi Saito¹, Naoyuki Yamasaki¹, Toshiya Kamikado¹, Hiroyuki Yoshida¹, Akihiko Hujii¹, Hiroshi Moritake², Masanori Ozaki¹ (Osaka University¹, NATIONAL DEFENSE ACADEMY²)

[29a-G14-10] Characteristic change of ferroelectric TGS gate organic transistor under paraelectric-ferroelectric phase transition

Jyunpei Omori¹, ^○Akihito Tsujinaka¹, Yasuko Koshiba¹, Masahiro Misaki¹, Kenji Ishida¹, Yasukiyo Ueda¹ (Kobe Univ.¹)

Session information

[29a-G14-1~10] 12.1 Fabrication methods