[29p-B4-1~15] 5.1 Semiconductor laser, Light emitter / Photodetector

Fri. Mar 29, 2013 2:00 PM - 6:15 PM B4 (K2 3F-1308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-B4-0] Lunch(60min)

[29p-B4-1] Study of nonocavity lasers for optoelectronic integration

^○Shinji Matsuo¹ (NTT Photonics Laboratories¹)

[29p-B4-2] 10-km SMF transmission using 25.8-Gbps directly modulated AlGaInAs distributed reflector laser arrays

^○Ayahito Uetake¹, Takasi Simoyama¹, Shigekazu Okumura¹, Manabu Matsuda¹, Mitsuru Ekawa¹, Tsuyoshi Yamamoto¹ (Fujitsu labs¹)

[29p-B4-3] △Long wavelength emission of GaAs_1-xBi_x laser with low-temperature dependence of oscillation wavelength

^○Takuma Fuyuki¹, Masahiro Yoshimoto¹ (Kyoto Inst. of Tech.¹)

[29p-B4-4] Low Bias Current Direct Modulation Using a 1.3-μm-range InGaAs Metamorphic Laser

^○Masakazu Arai¹, Wataru Kobayashi¹, Masaki Kohtoku¹ (NTT Photonics Laboratories¹)

[29p-B4-5] △Room-temperature CW Operation of GaInAsP/InP Semiconductor Membrane Laser

^○Kyohei Doi¹, Takahiko Shindo¹, Mitsuaki Futami¹, Jieun Lee¹, Yoshiaki Yamahara¹, Takuo Hiratani¹, Daisuke Inoue¹, Shu Yang¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (Dept. of Elecrical and Electronic Engineering¹, Quantum Nanoelectronics Research Center²)

[29p-B4-6] △GaInAsP Butt-Joint Regrowth for Membrane Photonic Integration by OMVPE

^○Daisuke Inoue¹, Jieun Lee¹, Takahiko Shindo², Mitsuaki Futami¹, Kyohei Doi¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (Dept. of Elecrical and Electronic Engineering¹, Quantum Nanoelectronics Research Center²)

[29p-B4-7] △Design of low-power-consumption membrane laser for on-chip optical interconnection

^○Takahiko Shindo¹, Kyohei Doi², Mitsuaki Futami², Tomohiro Amemiya¹, Nobuhiko Nishiyama², Shigehisa Arai^1,2 (Quantum Nanoelectronics Research Center, Tokyo Institute of Technology¹, Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology²)

[29p-B4-8] △Dsign of GaInAsP/InP Semiconductor Membrane Laser for Low Power Operation

^○Takuo Hiratani¹, Takahiko Shindo², Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology¹, Quantum Nanoelectronics Research Center, Tokyo Institute of Tecnology²)

[29p-B4-8.1] Break(15min)

[29p-B4-9] Flat-topped spectrum of InAs QDs LED using double-cap procedure and selective growth

^○Shohei Yoshikawa¹, Tomomitsu Saegusa¹, Yuto Iwane¹, Masayuki Yamauchi¹, Kazuhiko Shimomura¹ (sophia university¹)

[29p-B4-10] Low power consumption single mode quantum cascade lasers

^○Tatsuo Dougakiuchi¹, Akio Ito², Kazuue Fujita¹, Shinichi Furuta¹, Tadataka Edamura¹, Masamichi Yamanishi¹ (Hamamatsu Photonics K. K. Central Research Lab.¹, Hamamatsu Photonics K. K.²)

[29p-B4-11] ▲Room-Temperature Electroluminescence from Waveguide-Coupled Microdisk with Ge Self-Assembled Quantum Dots

^○Xuejun Xu¹, Taichi Chiba¹, Takuya Maruizumi¹, Yasuhiro Shiraki¹ (Advanced Research Laboratories, Tokyo City Univ.¹)

[29p-B4-12] Time domain analysis of emission fro dense G-centers doped in Si

^○（D）Fuminori Omura¹, Koichi Murata^2,3, Yuhsuke Yasutake¹, Kazushi Miki^2,3, Susumu Fukatsu¹ (Univ. Tokyo¹, NIMS², Univ. Tsukuba³)

[29p-B4-13] △Consideration of the S/N ratio in the Semiconductor Optical Amplifier

^○Kazuki Higuchi¹, Nobuhito Takeuchi¹, Minoru Yamada¹, Yuji Kuwamura¹ (Kanazawa Univ.¹)

[29p-B4-14] ▲Numerical Analysis of Suppression Effects on Optical Feedback Noise by Superposition of High Frequency Current in Semiconductor Lasers

^○（D）Sazzad Imran¹, Minoru Yamada¹ (Kanazawa Univ.¹)

[29p-B4-15] Self-Pumped Phase Conjugate Mirror Using the Divergent Spherical Wave

^○Shigenobu Kakuno¹, Takaaki Mukai¹, Naoki Iwasaki¹, Makoto Inoue¹, Daisuke Miyazaki¹ (Osaka City Univ.¹)

Session information

[29p-B4-1~15] 5.1 Semiconductor laser, Light emitter / Photodetector