Symposium(Oral presentation)
[28a-G20-1~10] Recent status for fabrication and characterization of semiconductor quantum dots
Thu. Mar 28, 2013 9:30 AM - 12:30 PM G20 (B5 4F-2404)
△:Young Scientist Oral Presentation Award Applied
▲:English Presentation
▼:Both Award Applied and English Presentation
○Koichi Yamaguchi1 (Univ. of Electro-Communications1)
○Katsuyuki Watanabe1, Yasuhiko Arakawa1,2 (IIS, Univ. of Tokyo1, NanoQuine, Univ. of Tokyo2)
○Kouichi Akahane1, Naokatsu Yamamoto1 (NICT1)
[28a-G20-4] Formation and emission characterization of GaInAs quantum dots on GaP Substrate by MOCVD
○(M1)Fumiya Hoshino1, Tomoyuki Miyamoto1, Toshihiro Furukawa1 (P&I Lab.1)
○Kenichi Shimomura1, Itaru Kamiya1 (Toyota Tech. Inst.1)
○Katsumi Yoshizawa1, Yoshinori Sawado1, Koichi Akahane2, Naokatsu Yamamoto2 (PioneerMTC1, NICT2)
○Yoshinori Sawado1, Katsumi Yoshizawa1, Kouichi Akahane2, Naokatsu Yamamoto2 (PioneerMTC1, NICT2)
○Takahiro Kitada1, Chiho Harayama1, Ken Morita1, Toshiro Isu1 (Univ. of Tokushima1)
○Takeo Kageyama1,2, Kenichi Nishi1,2, Yasunari Maeda1, Keizo Takemasa1,2, Mitsuru Sugawara1,2, Yasuhiko Arakawa2,3 (QD Laser, Inc.1, NanoQuine, The University of Tokyo2, IIS, The University of Tokyo3)
○Norio Murase1, Ping Yang1, Chunnriang Li1 (AIST1)