△Electrical Properties of Epitaxially Grown Ge1-x-ySixSny/n-Ge(001) Hetero Junctions.

Shunsuke Asaba

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[27a-G20-1~9] 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Mar 27, 2013 9:30 AM - 12:00 PM G20 (B5 4F-2404)

[27a-G20-8] △Electrical Properties of Epitaxially Grown Ge_1-x-ySi_xSn_y/n-Ge(001) Hetero Junctions.

^○Shunsuke Asaba¹, Takashi Yamaha¹, Masashi Kurosawa^1,2, Mitsuo Sakashita¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS Research Fellow (PD)²)

Keywords:GeSiSn、pn接合

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Presentation information

[27a-G20-1~9] 15.5 IV-group crystals and IV-IV-group mixed crystals

[27a-G20-8] △Electrical Properties of Epitaxially Grown Ge1-x-ySixSny/n-Ge(001) Hetero Junctions.

[27a-G20-8] △Electrical Properties of Epitaxially Grown Ge_1-x-ySi_xSn_y/n-Ge(001) Hetero Junctions.