[27a-PB2-1~24] 6.3 Oxide-based electronics

[27a-PB2-20] Current - voltage characteristics of ReRAM involving sulfuric anodic porous alumina thin film with additional electrochemical treatment

^○Yusuke Tanimoto¹, Saeko Furuya¹, Shintaro Otsuka², Tomohiro Shimizu², Syouso Shingubara², Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹ (Nihon Univ.¹, Kansai Univ.²)

Keywords:ReRAM、ポーラスアルミナ