[27a-PB4-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[27a-PB4-2] Evaluation of Trap States in Amorphous In-Ga-Zn-O Using 40-nm-thick Metal-Oxide-Semiconductor Diodes (2)

^○Shuji Kosaka¹, Hiroaki Tao¹, Shinya Morita¹, Aya Hino¹, Satoshi Yasuno², Tomoya Kishi¹, Kazushi Hayashi¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd¹, KOBELCO Research Institute, Inc²)

Keywords:酸化物半導体、IGZO、DLTS