[27a-PB4-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[27a-PB4-24] Fabrication of high-mobility widegap semiconductor ZnInON by RF magnetron sputtering

^○（M1）Koichi Matsushima¹, Kazunari Kuwahara¹, Tadafumi Hirose¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Hyunwoong Seo¹, Giichiro Uchida¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki^1,2 (Kyushu Univ¹, JST-PRESTO²)

Keywords:ZnInON、スパッタリング