The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

08. Plasma Electronics » 8.4 Plasma etching

[27p-A3-1~17] 8.4 Plasma etching

Wed. Mar 27, 2013 1:30 PM - 6:00 PM A3 (K1 2F-201)

[27p-A3-3] Behavior of Br radical in HBr inductively coupled plasma

Daiki Iino1, Yasuhiro Nojiri1, Keiji Suzuki1, Takumi Oike2, Yoshitaka Fujii2, Hirotaka Toyoda2,3 (Corporate Manufacturing Engineering Center, Toshiba1, Nagoya Univ.2, PLANT, Nagoya Univ.3)

Keywords:HBrプラズマ、ラジカル