[27p-A3-1~17] 8.4 Plasma etching

[27p-A3-8] Research on plasma etching mechanism of AlGaN

^○（M1）Jiadong Cao¹, Ryosuke Kometani¹, Yi Lu¹, Jongyun Park¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

Keywords:窒化物半導体、エッチング、表面分析