The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

08. Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[27p-A7-1~17] 8.3 Plasma deposition of thin film and surface treatment

Wed. Mar 27, 2013 1:30 PM - 6:00 PM A7 (K1 3F-306)

[27p-A7-11] ▼Study on mechanism of gallium nitride growth employing a plasma-enhanced metal-organic chemical vapor deposition

○(D)Yi Lu1, Hiroki Kondo1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (Nagoya University1)

Keywords:PECVD、gallium nitride