Regular sessions(Oral presentation)

[27p-A7-1~17] 8.3 Plasma deposition of thin film and surface treatment

Wed. Mar 27, 2013 1:30 PM - 6:00 PM A7 (K1 3F-306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-A7-1] DLC formation by using dielectric barrier discharge plasma CVD

^○Kazuya Tada¹, Hirosi Hamada¹, Koji Oue¹, Shinji Yasui¹ (Nagoya Inst.Tech¹)

[27p-A7-2] HfO2 Deposition on Graphene with Plasma Enhanced Atomic Layer Deposition

^○Takeshi Kitajima¹, Toshiki Nakano¹ (Nat. Def. Acad.¹)

[27p-A7-3] Effect of plasma on/off time on the uniformity of film thickness in internal DLC coating with pulsed microwave plasmas

Ryosuke Matsui¹, ^○HIroyuki Kousaka¹, Noritsugu Umehara¹ (Nagoya Univ.¹)

[27p-A7-4] Prediction of growth rate of single-crystal diamond by using plasma CVD

^○Hideaki Yamada¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹, Nobuteru Tsubouchi¹, Shin-ichi Shikata¹ (DRL, AIST¹)

[27p-A7-5] Synthesis of diamond thin films Using Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

^○Mayuri Kawata¹, Yoshihiro Ojiro¹, Shuichi Ogawa¹, Tomoaki Mazuzawa², Ken Okano², Yuko Takakuwa¹ (Tohoku Univ.¹, ICU²)

[27p-A7-6] Nitriding-Quenching for Low-Alloy Steel using Atmospheric-Pressure Plasma Jet System

^○Ryuta Ichiki¹, Hirokazu Nagamatsu¹, Takashi Inoue¹, Masashi Yoshida², Shuichi Akamine¹, Seiji Kanazawa¹ (Oita Univ.¹, Shizuoka Inst. Sci. Technol.²)

[27p-A7-7] ▲Deposition of highly conducting Cu thin film on polyimide substrate using RF-driven atmospheric pressure plasma jet in nitrogen atmosphere

^○Peng Zhao¹, Wei Zheng², Masaaki Nagatsu¹ (Shizuoka Univ.¹, Yazaki Corp.²)

[27p-A7-7.1] Break(15min)

[27p-A7-8] △Investigation of property of μc-Si film fabricated by H radical-injection plasma CVD

^○Yusuke Abe¹, Keita Miwa¹, Atsushi Fukushima¹, Ya Lu¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

[27p-A7-9] △Studies on Dielectric Film Formation with Plasma Enhanced Mist Chemical Vapor Deposition for Printable Electronics

^○（M1）Kuangda Sun¹, Keigo Takeda¹, Hitoshi Itoh^1,2, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹, Tokyo Electron Ltd²)

[27p-A7-10] Structural information from IR spectroscopy on SiN_x deposited from SiH₄+N₂ gas mixture using VHF-PECVD

^○Shin-ichi Kobayashi¹ (Tokyo Polytechnic Univ.¹)

[27p-A7-11] ▼Study on mechanism of gallium nitride growth employing a plasma-enhanced metal-organic chemical vapor deposition

^○（D）Yi Lu¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya University¹)

[27p-A7-12] Comparison among sticking probabilities of Cu, Sn, and Zn atoms in magnetron sputtering deposition employing a CZTS target

^○Shunya Kikuchi¹, Koichi Sasaki¹ (Hokkaido Univ.¹)

[27p-A7-13] Controllability of Plasma Enhanced Reactive Sputtering Process for Formation of Semiconductor Thin Films

Yuichi Setsuhara¹, ^○Kosuke Takenaka¹, Hirofumi Otani¹, Atsuki Kanai¹, Akinori Ebe² (Osaka Univ.¹, EMD Corp.²)

[27p-A7-14] Plasma potential control in magnetron sputtering deposition (II)

Takuya Umahashi¹, ^○Takeo Nakano¹, Shigeru Baba¹ (Seikei Univ.¹)

[27p-A7-15] Primary Study of Photoelectrochemical Effect Cell Using TiO₂ Thin Films (II)

Tomohide Akiyama¹, Toshihiro Nakamura¹, ^○Osamu Sakai¹ (Kyoto Univ.¹)

[27p-A7-16] △Development of Resist removal process using microwave excited bubble plasma under water

^○Kouhei Nosaka¹, Tatsuo Ishijima¹, Yasunori Tanaka¹, Yoshihiko Uesugi¹, Hideo Horibe², Yosuke Goto² (Kanazawa University¹, Kanazawa Institute of technology²)

[27p-A7-17] △Surface Functionalization of Vertically Aligned Carbon Nanotube Array Substrate Using by Atmospheric Pressure Plasma Jet

^○Yohei Mochizuki¹, Han Chou², Masaaki Nagatsu³ (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³)

Sessions

08. Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment