[27p-G20-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

[27p-G20-9] Growth Velocity during SiGe-Mixing-Triggerd Rapid-Melting-Growth -Correlation with Lateral Profile of Electrical Properties-

^○Ryo Matsumura¹, Yuki Tojo¹, Masashi Kurosawa^1,2, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹, JSPS Research Fellow²)

Keywords:SiGe、偏析、SGOI