[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-4] Plasma-Induced Defects in III-Nitrides and Other III-V Compound Semiconductors

^○Tsugunori Okumura¹, Seiji Nakamura¹ (Tokyo Metropolitan Univ.¹)

Keywords:プラズマ照射誘起欠陥、Ⅲ族窒化物半導体、化合物半導体