[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-9] Improvement of the current collapse in GaN HEMT using the SiN passivation layer deposited by electron cyclotron resonance-sputter method

^○Chihoko Mizue¹, Hiroyuki Ichikawa¹, Kazutaka Inoue¹ (Transmission Device Lab. SEI¹)

Keywords:GaN HEMT、SiN、電流コラプス