[27p-PB4-1~16] 13.5 Si process technology

[27p-PB4-14] Observation of surface band bending of P incorporated NiSi₂/n-Ge using hard x-ray photoelectron spectroscopy

^○Ryo Yoshihara¹, Yuta Tamura¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:硬X線光電子分光