[27p-PB5-1~13] 13.6 Silicon devices / Integration technology

[27p-PB5-3] △Effects of thinning Ge-On-Insulator layers formed by Germanium condensation technique on hole mobility in MOS channels

^○Yufei Xin¹, Younghyun Kim¹, Rui Zhang¹, Takenori Osada², Masahiko Hata², Masafumi Yokoyama¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (The University of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

Keywords:酸化濃縮、ホール移動度