[27p-PB5-1~13] 13.6 Silicon devices / Integration technology

[27p-PB5-4] Channel thickness fluctuation scattering in extremely-thin In_xGa_1-xAs-OI MOSFETs

^○SangHyeon Kim^1,2, Masafumi Yokoyama¹, Noriyuki Taoka¹, Ryosho Nakane¹, Takenori Osada³, Osamu Ichikawa³, Noboru Fukuhara³, Masahiko Hata³, Mitsuru Takenaka¹, Shinichi Takagi¹ (The Univ. of Tokyo¹, JSPS research fellow², 3Sumitomo Chemical Co.Ltd.³)

Keywords:InGaAs-OI MOSFET