The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28a-G11-1~9] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 10:00 AM - 12:30 PM G11 (B5 2F-2205)

[28a-G11-3] Effects of Dry Etching on the Interface Properties of AlGaN/GaN MOS Structures

○Zenji Yatabe1, Yujin Hori1, Wan-cheng Ma1, Hashizume Tamotsu1,2 (RCIQE, Graduate School of Information Science and Technology, Hokkaido Univ.1, JST-CREST2)

Keywords:AlGaN/GaN、界面準位密度、ドライエッチング