Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28a-G11-1~9] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 10:00 AM - 12:30 PM G11 (B5 2F-2205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28a-G11-1] Wet cleaning of GaN surfaces using functional water

^○Yukihiro Tsuji^1,2, Kenichi Nakamura^1,2, Isao Makabe¹, Ken Nakata¹, Tsukuru Katsuyama¹, Akinobu Teramoto², Yasuyuki Shirai², Shigetoshi Sugawa², Tadahiro Ohmi² (Sumitomo Electric Industries, LTD.¹, Tohoku University²)

[28a-G11-2] Effect of annealing on ALD-Al₂O₃/InAlN interface

^○Takuma Nakano¹, Masamichi Akazawa¹ (RCIQE, Hokkaido University¹)

[28a-G11-3] Effects of Dry Etching on the Interface Properties of AlGaN/GaN MOS Structures

^○Zenji Yatabe¹, Yujin Hori¹, Wan-cheng Ma¹, Hashizume Tamotsu^1,2 (RCIQE, Graduate School of Information Science and Technology, Hokkaido Univ.¹, JST-CREST²)

[28a-G11-4] △Characterization of Electrical Properties and Hetero-MOS interface states of AlGaN/GaN MOS HEMTs

^○Yujin Hori¹, Zenji Yatabe¹, Tamotsu Hashizume^1,2 (RCIQE Hokkaido Univ.¹, JST-CREST²)

[28a-G11-5] Effects of buffer layers on GaN-based junction properties

^○Wancheng Ma¹, Yujin Hori¹, Zenji Yatabe¹, Tamotsu Hashizume^1,2 (RCIQE, Graduate School of Information Science and Technology, Hokkaido Univ.¹, JST-CREST²)

[28a-G11-5.1] Break(15min)

[28a-G11-6] Evaluation of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates

^○Kenji Shiojima¹, Yuuhei Kihara¹, Toshitika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima² (Univ. of Fukui¹, Hitachi Cable²)

[28a-G11-7] △MCTS analysis of hole traps in MOCVD n-GaN

^○（M1）Zecheng Liu¹, Jiangdong Cao¹, Kenji Ishikawa¹, Masaru Hori¹, Toshiya Matsumura², Akihiro Arubi², Asahi Kojima², Unhi Honda², Yutaka Tokuda², Hiroyuki Ueda³, Tetsuo Narita³, Tsutomu Uesugi³, Tooru Kachi³ (Nagoya University¹, Aichi Inst. of Technol.², Toyota Central R&D Lab. Inc.³)

[28a-G11-8] △Characterization of p-GaN contacts with non-linear properties by TLM method

^○（B）Jaeho Youn¹, Tsunenobu Kimoto², Jun Suda², Kaori Kurihara³, Satoru Nagao³ (Kyoto Univ.¹, Kyoto Univ.², Mitsubishi Chemical Corp.³)

[28a-G11-9] △AC operation of low-Mg-doped p-GaN Schottky diodes

^○Toshichika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima², Kenji Shiojima¹ (Univ. of Fukui¹, Hitachi Cable²)

Session information

[28a-G11-1~9] 14.3 Electron devices and Process technology