[28a-G11-1~9] 14.3 Electron devices and Process technology

[28a-G11-5] Effects of buffer layers on GaN-based junction properties

^○Wancheng Ma¹, Yujin Hori¹, Zenji Yatabe¹, Tamotsu Hashizume^1,2 (RCIQE, Graduate School of Information Science and Technology, Hokkaido Univ.¹, JST-CREST²)

Keywords:超格子層、緩衝層、C-V特性