[28a-G11-1~9] 14.3 Electron devices and Process technology

[28a-G11-7] △MCTS analysis of hole traps in MOCVD n-GaN

^○（M1）Zecheng Liu¹, Jiangdong Cao¹, Kenji Ishikawa¹, Masaru Hori¹, Toshiya Matsumura², Akihiro Arubi², Asahi Kojima², Unhi Honda², Yutaka Tokuda², Hiroyuki Ueda³, Tetsuo Narita³, Tsutomu Uesugi³, Tooru Kachi³ (Nagoya University¹, Aichi Inst. of Technol.², Toyota Central R&D Lab. Inc.³)

Keywords:n-GaN