[28a-G2-1~12] 13.3 Insulator technology

[28a-G2-2] △Quantum Chemical Molecular Dynamics Approach to SiO₂ Etching Processes by Fluorocarbon Radicals

^○（M2）Hiroshi Ito¹, Takuya Kuwahara¹, Takeshi Ishikawa¹, Yuji Higuchi¹, Nobuki Ozawa¹, Seiji Samukawa², Momoji Kubo¹ (Graduate School of Engineering, Tohoku Univ.¹, Inst. of Fluid Science, Tohoku Univ.²)

Keywords:エッチング、シリコン酸化膜、シミュレーション