The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

[28a-G22-1~13] 15.6 IV-group-based compounds

Thu. Mar 28, 2013 9:00 AM - 12:30 PM G22 (B5 4F-2406)

[28a-G22-2] △Real-time Observation of High Temperature Interface during Dissolution of SiC into Molten Alloy utilizing Interference Pattern

Sakiko Kawanishi1, Takeshi Yoshikawa1, Kazuki Morita1, Hiroshi Suzuki2, Hidemitsu Sakamoto2 (The Univ. of Tokyo1, Toyota Motor Corp.2)

Keywords:SiC、溶液成長、リアルタイム観察