[28a-G22-1~13] 15.6 IV-group-based compounds

[28a-G22-8] Off-angle dependence on homoepitaxial growth on 4H-SiC(0001) Si-face

^○Kentaro Tamura^1,3, Chiaki Kudou^1,4, Keiko Masumoto^1,2, Kazutoshi Kojima^1,2 (FUPET¹, AIST², Rohm³, Panasonic⁴)

Keywords:ステップバンチング、低オフ角、化学気相成長