MBE growth of Er<sub>2</sub>O<sub>3</sub> on Si substrates

Hiroo Omi

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[28a-G5-1~10] 14.4 Optical properties and light-emitting devices

Thu. Mar 28, 2013 10:00 AM - 12:45 PM G5 (B5 1F-2105)

[28a-G5-1] MBE growth of Er₂O₃ on Si substrates

^○Hiroo Omi^1,2, Takehiko Tawara^1,2, Reina Kaji³, Takahito Hozumi³, Satoru Adachi³, Hideki Gotoh¹, Tetsuomi Sougawa¹ (NTT Basic Research Labs.¹, NTT Nanophotonics Center², Hokkaidou univ.³)

Keywords:Erbium oxide、Si

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Presentation information

[28a-G5-1~10] 14.4 Optical properties and light-emitting devices

[28a-G5-1] MBE growth of Er2O3 on Si substrates

[28a-G5-1] MBE growth of Er₂O₃ on Si substrates