The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[28a-G9-1~11] 13.6 Silicon devices / Integration technology

Thu. Mar 28, 2013 9:00 AM - 11:45 AM G9 (B5 2F-2203)

[28a-G9-7] Performance and design of pseudo-spin-MOSFET and nonvolatile SRAM cell using nano-CMOS technology

○Yusuke Shuto1,3,4, Shuu'ichirou Yamamoto2,3, Satoshi Sugahara1,3 (ISEL, Tokyo Inst. Tech.1, Dept. Info. Processing, Tokyo Inst. Tech.2, CREST, JST3, KAST4)

Keywords:不揮発性SRAM、スピンMOSFET、パワーゲーティング