The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

07. Beam Technology and Nanofabrication » 7.3 Lithography

[28p-B2-1~13] 7.3 Lithography

Thu. Mar 28, 2013 1:30 PM - 5:00 PM B2 (K2 3F-1302)

[28p-B2-8] △The relationship between esterification rate of photo-active compounds and lithographic properties of the positive-tone novolak resists

Seji Saito1, Takuya Matsuda1, Keita Ishiguro1, Seiji Takahashi1, Akihiko Kono1, Sekiguchi Atsushi2, Katsuto Taniguchi3, Hatsuyuki Tanaka3, Hideo Horibe1 (Kanazawa Institute of Technology1, Litho Tech Japan Co.2, AZ Electronic Materials K.K.3)

Keywords:lithographic properties、novolak resists、esterification rate