[28p-B9-1~10] 9.3 Nanoelectronics

[28p-B9-3] △Control of threshold voltage in a SiN/AlGaAs/GaAs nanowire FET

^○Ryota Kuroda^1,2, Seiya Kasai^1,2 (Graduate School of Info. Tech., Hokkaido Univ.¹, Reserch Center for Integrated Quantum Electronics²)

Keywords:AlGaAs/GaAsナノワイヤ、SiN、しきい値